CALCULATION AND ANALYSIS OF ELECTRON TRANSPORT COEFFICIENTS IN TEOS- SiH 4 GAS MIXTURES

  • Phan Thi Tuoi Hung Yen University of Technology and Education
  • Nguyen Thi Thuy Dung Hung Yen University of Technology and Education
  • Phan Bich Ngoc Hung Yen University of Technology and Education
  • Pham Thi Ngoc Anh Hung Yen University of Technology and Education
  • Nguyen Thi Huyen Linh Hung Yen University of Technology and Education

Abstract

The electron transport coefficients, which include the electron drift velocities, the density-normalized longitudinal diffusion coefficients and the Townsend first ionization coefficients are important data for plasma modelling. These coefficients in TEOS and its mixture with SiH4, were firstly studied using a Boltzmann two-term calculation. This study was carried out in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (1Td = 10-17Vcm2). These results are necessary for plasma processing using the TEOS-SiH4 mixtures.

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Published
2023-12-12